• 姓名: 张杰
  • 职称: 讲师
  • 学位: 博士
  • 湖南科技大学
  • 化学化工学院
教育背景
硕博连读毕业于厦门大学。
学术成果

近年来主持国家自然科学基金青年项目1项。

在《J.Am.Chem.Soc.》、《Chem.Sci.》、《Nanoscale》、《J.Phys.Chem.C》等国内外重要刊物上公开发表论文20余篇,其中被SCI收录22篇。

授权国家发明专利2项。

科研项目
国家自然科学基金,基于电场调制的金属辅助刻蚀技术及其机理研究(No. 51605404),20万,2017.01-2019.12
论文专著

1、Zheng, Qing; Huang, Ximing; Liu, Yao; Fang, Xiaotong; Zhang, Jie; Shao, Huibo, Electrochemical Quantification of Intermolecular Hydrogen Bonding between Ferrocenemethanol and 3-Mercaptopropanoic Acid on Gold. J. Phys. Chem. C 2017. DOI: 10.1021/acs.jpcc.7b06497

2、Zhang, Jie; Zhang, Lin; Wang, Wei; Han, Lianhuan; Jia, Jing-Chun; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping, Contact Electrification Induced Interfacial Reactions and Direct Electrochemical Nanoimprint Lithography in N-Type Gallium Arsenate Wafer. Chem. Sci. 2017, 8 (3), 2407-2412.

3、Zhang, Jie; Zhang, Lin; Han, Lianhuan; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping, Electrochemical Nanoimprint Lithography: When Nanoimprint Lithography Meets Metal Assisted Chemical Etching. Nanoscale 2017, 9 (22), 7476-7482.

4、Zhang, Jie; Lai, Junhui; Wang, Wei; Huang, Pei; Jia, Jingchun; Han, Lianhuan; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping, Etching Kinetics of Iii–V Semiconductors Coupled with Surface Passivation Investigated by Scanning Electrochemical Microscopy. J. Phys. Chem. C 2017, 121 (18), 9944-9952.

5、Zhang, Jie; Dong, Bo-Ya; Jia, Jingchun; Han, Lianhuan; Wang, Fangfang; Liu, Chuan; Tian, Zhong-Qun; Tian, Zhao-Wu; Wang, Dongdong; Zhan, Dongping, Electrochemical Buckling Microfabrication. Chem. Sci. 2016, 7 (1), 697-701.

6、Zhong, Jin-Hui†; Zhang, Jie†; Jin, Xi; Liu, Jun-Yang; Li, Qiongyu; Li, Mao-Hua; Cai, Weiwei; Wu, De-Yin; Zhan, Dongping; Ren, Bin, Quantitative Correlation between Defect Density and Heterogeneous Electron Transfer Rate of Single Layer Graphene. J. Am. Chem. Soc. 2014, 136 (47), 16609-16617.

7、Zhang, Jie; Jia, Jingchun; Han, Lianhuan; Yuan, Ye; Tian, Zhong-Qun; Tian, Zhao-Wu; Zhan, Dongping, Kinetic Investigation on the Confined Etching System of N-Type Gallium Arsenide by Scanning Electrochemical Microscopy. J. Phys. Chem. C 2014, 118 (32), 18604-18611.

专利成果

1、 詹东平,张杰,田中群,贾晶春,韩联欢,袁野,田昭武,一种复杂三维多级微纳结构的约束刻蚀加工方法,专利号:2013101951283

2、 詹东平,张杰,田中群,田昭武,一种半导体表面微纳米结构的加工方法,专利号:201510458556X